IRG4PSC71UD insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.67v @v ge = 15v, i c = 60a ultrafast copack igbt 5/12/99 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 85 ? i c @ t c = 100c continuous collector current 60 i cm pulsed collector current ? 200 a i lm clamped inductive load current ? 200 i f @ t c = 100c diode continuous forward current 60 i fm diode maximum forward current 350 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 350 p d @ t c = 100c maximum power dissipation 140 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) benefits pd - 91682a w www.irf.com 1 ? generation 4 igbt design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations ? igbt co-packaged with hexfred ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations ? industry-benchmark super-247 package with higher power handling capability compared to same footprint to-247 ? creepage distance increased to 5.35mm ? generation 4 igbt's offer highest efficiencies available ? maximum power density, twice the power handling of to-247, less space than to-264 ? igbts optimized for specific application conditions ? hexfred diodes optimized for performance with igbts ? cost and space saving in designs that require multiple, paralleled igbts super - 247 parameter min. typ. max. units r q jc junction-to-case - igbt CCC CCC 0.36 r q jc junction-to-case - diode CCC CCC 0.69 c/w r q cs case-to-sink, flat, greased surface CCC 0.24 CCC r q ja junction-to-ambient, typical socket mount CCC CCC 38 recommended clip force 20.0(2.0) CCC CCC n (kgf) weight CCC 6 (0.21) CCC g (oz) thermal resistance\ mechanical
IRG4PSC71UD 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 340 520 i c = 60a qge gate - emitter charge (turn-on) CCC 44 66 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) CCC 160 240 v ge = 15v t d(on) turn-on delay time CCC 90 CCC t j = 25c t r rise time CCC 94 CCC ns i c = 60a, v cc = 480v t d(off) turn-off delay time CCC 245 368 v ge = 15v, r g = 5.0 w t f fall time CCC 110 167 energy losses include "tail" and e on turn-on switching loss CCC 3.26 CCC diode reverse recovery. e off turn-off switching loss CCC 2.27 CCC mj see fig. 9, 10, 11, 18 e ts total switching loss CCC 5.53 7.2 t d(on) turn-on delay time CCC 91 CCC t j = 150c, see fig. 9, 10, 11, 18 t r rise time CCC 88 CCC ns i c = 60a, v cc = 480v t d(off) turn-off delay time CCC 353 CCC v ge = 15v, r g = 5.0 w t f fall time CCC 150 CCC energy losses include "tail" and e ts total switching loss CCC 7.1 CCC mj diode reverse recovery. l e internal emitter inductance CCC 13 CCC nh measured 5mm from package c ies input capacitance CCC 7500 CCC v ge = 0v c oes output capacitance CCC 720 CCC pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 93 CCC ? = 1.0mhz t rr diode reverse recovery time CCC 82 120 t j = 25c see fig. CCC 140 210 t j = 125c 14 i f = 60a i rr diode peak reverse recovery current CCC 8.2 12 t j = 25c see fig. CCC 13 20 t j = 125c 15 v r = 200v q rr diode reverse recovery charge CCC 364 546 t j = 25c see fig. CCC 1084 1625 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery CCC 328 CCC t j = 25c see fig. during t b CCC 266 CCC t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 CCC CCC v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage CCC 0.39 CCC v/c v ge = 0v, i c = 10ma v ce(on) collector-to-emitter saturation voltage CCC 1.67 2.0 i c = 60a v ge = 15v CCC 1.95 CCC i c = 100a see fig. 2, 5 CCC 1.71 CCC i c = 60a, t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage CCC -13 CCC mv/c v ce = v ge , i c = 1.5ma g fe forward transconductance ? 47 70 CCC s v ce = 50v, i c = 60a i ces zero gate voltage collector current CCC CCC 500 a v ge = 0v, v ce = 600v CCC CCC 13 ma v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop CCC 1.4 1.7 i c = 60a see fig. 13 CCC 1.3 CCC i c = 60a, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) v v ns a nc a/s
IRG4PSC71UD www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 0 20 40 60 80 f, fre q uenc y ( khz ) load current (a) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 58 1 10 100 1000 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 150 c j t = 25 c j 1 10 100 1000 1.0 1.5 2.0 2.5 3.0 3.5 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 80s pulse width ge t = 25 c j t = 150 c j ic , collector-to-emitter current (a)
IRG4PSC71UD 4 www.irf.com fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 120 c i = a 60 c i = a 30 c maximum dc collector current (a) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1 t , rectan g ular pulse duration ( sec ) a d = 0.50 0.20 0.10 0.05 0.02 0.01 sin g le pu lse (thermal response) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c thermal response (z thjc ) 0 20 40 60 80 100 25 50 75 100 125 150 t , case tem perature ( c ) c a v = 15 v limited by package ge
IRG4PSC71UD www.irf.com 5 fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 14000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 r , gate resistance total switching losses (mj) g v = 480v v = 15v t = 25 c i = 60a cc ge j c 0 100 200 300 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 60a cc c r g , gate resistance ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = 5.0ohm v = 15v v = 480v g ge cc i = a 120 c i = a 60 c i = a 30 c 5.0 w
IRG4PSC71UD 6 www.irf.com fig. 13 - maximum forward voltage drop vs. instantaneous forward current instantaneous forward current - i f (a) fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 1 10 100 1000 0.0 1.0 2.0 3.0 fm forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 20 40 60 80 100 120 0 5 10 15 20 25 i , collector current (a) total switching losses (mj) c r = 5.0ohm t = 150 c v = 480v v = 15v g j cc ge w 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c
IRG4PSC71UD www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 40 80 120 160 200 100 1000 f di /dt - (a/s) i = 30a i = 60a i = 120a f f f r j j v = 200v t = 125c t = 25c 1 10 100 100 1000 f di /dt - (a/s) i = 30a i = 60a i = 120a f f f r j j v = 200v t = 125c t = 25c 0 1000 2000 3000 4000 100 1000 f di /dt - ( a/ s ) i = 30a i = 60a i = 120a f f f r j j v = 200v t = 125c t = 25c 100 1000 10000 100 1000 f di /dt - ( a/ s ) i = 30a i = 60a i = 120a f f f r j j v = 200v t = 125c t = 25c di (rec) m/dt- (a /s) irr- ( a) trr- (nc) qrr- (nc)
IRG4PSC71UD 8 www.irf.com same t y pe device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic dt 90% v g e +v g e eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +v g 10% +v g 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vc ic dt vce ic dt ic dt vce ic dt
IRG4PSC71UD www.irf.com 9 v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
IRG4PSC71UD 10 www.irf.com notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 w (figure 19) ? pulse width 80s; duty factor 0.1% ? pulse width 5.0s, single shot ? current limited by the package, (die current = 100a) case outline and dimensions super-247 dimensions are shown in millimeters world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 5/99
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